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InGaAsP/InP MQW电流控制型双稳/非线性增益开关激光器
张权生; 石志文; 杜云; 颜学进; 赵军
1996
Source Publication半导体学报
Volume17Issue:11Pages:813
Abstract一种电流控制型二端及三端MOW(多量子阱)InGaAsP/InP双区共腔双稳/非线性增益开关激光器业已研制成功,文中报道了部分结果.
metadata_83中科院半导体所
Subject Area半导体器件
Funding Organization国家863计划,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:306381
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19669
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张权生,石志文,杜云,等. InGaAsP/InP MQW电流控制型双稳/非线性增益开关激光器[J]. 半导体学报,1996,17(11):813.
APA 张权生,石志文,杜云,颜学进,&赵军.(1996).InGaAsP/InP MQW电流控制型双稳/非线性增益开关激光器.半导体学报,17(11),813.
MLA 张权生,et al."InGaAsP/InP MQW电流控制型双稳/非线性增益开关激光器".半导体学报 17.11(1996):813.
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