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由选择腐蚀和选择氧化法相结合研制的GaAs/AlGaAs垂直腔面发射激光器
康学军; 林世鸣; 高俊华; 高洪海; 王启明; 王红杰; 王立轩; 张春晖
1996
Source Publication半导体学报
Volume17Issue:11Pages:873
Abstract报道了由选择氧化和选择腐蚀法相结合研制的GaAs/AlGaAs垂直腔面发射半导体光器,DBR中的AlAs经选择氧化后形成的氧化层作为有源区的横向电流限制层,器件的最低阈值电流为3.8mA,输出功率大于1mW,发散角小于7.8°,高频测量脉冲上升沿达100ps,并制成了2×3列阵器件.
metadata_83中科院半导体所
Subject Area半导体器件
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:306391
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19665
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
康学军,林世鸣,高俊华,等. 由选择腐蚀和选择氧化法相结合研制的GaAs/AlGaAs垂直腔面发射激光器[J]. 半导体学报,1996,17(11):873.
APA 康学军.,林世鸣.,高俊华.,高洪海.,王启明.,...&张春晖.(1996).由选择腐蚀和选择氧化法相结合研制的GaAs/AlGaAs垂直腔面发射激光器.半导体学报,17(11),873.
MLA 康学军,et al."由选择腐蚀和选择氧化法相结合研制的GaAs/AlGaAs垂直腔面发射激光器".半导体学报 17.11(1996):873.
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