Knowledge Management System Of Institute of Semiconductors,CAS
As+注入Si1-xGex中应就驰豫的双晶X射线衍射研究 | |
邹吕凡; 王占国; 孙殿照; 何沙; 范缇文; 张靖巍 | |
1996 | |
Source Publication | 半导体学报
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Volume | 17Issue:12Pages:946 |
metadata_83 | 中科院半导体所;中南民族学院电子工程系 |
Subject Area | 半导体材料 |
Funding Organization | 国家自然科学基金 |
Indexed By | CSCD |
Language | 中文 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/19655 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 邹吕凡,王占国,孙殿照,等. As+注入Si1-xGex中应就驰豫的双晶X射线衍射研究[J]. 半导体学报,1996,17(12):946. |
APA | 邹吕凡,王占国,孙殿照,何沙,范缇文,&张靖巍.(1996).As+注入Si1-xGex中应就驰豫的双晶X射线衍射研究.半导体学报,17(12),946. |
MLA | 邹吕凡,et al."As+注入Si1-xGex中应就驰豫的双晶X射线衍射研究".半导体学报 17.12(1996):946. |
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