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As+注入Si1-xGex中应就驰豫的双晶X射线衍射研究
邹吕凡; 王占国; 孙殿照; 何沙; 范缇文; 张靖巍
1996
Source Publication半导体学报
Volume17Issue:12Pages:946
metadata_83中科院半导体所;中南民族学院电子工程系
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19655
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
邹吕凡,王占国,孙殿照,等. As+注入Si1-xGex中应就驰豫的双晶X射线衍射研究[J]. 半导体学报,1996,17(12):946.
APA 邹吕凡,王占国,孙殿照,何沙,范缇文,&张靖巍.(1996).As+注入Si1-xGex中应就驰豫的双晶X射线衍射研究.半导体学报,17(12),946.
MLA 邹吕凡,et al."As+注入Si1-xGex中应就驰豫的双晶X射线衍射研究".半导体学报 17.12(1996):946.
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