As＋注入Si1-xGex中应就驰豫的双晶X射线衍射研究

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	As＋注入Si1-xGex中应就驰豫的双晶X射线衍射研究
	邹吕凡; 王占国; 孙殿照; 何沙; 范缇文; 张靖巍
	1996
Source Publication	半导体学报
Volume	17 Issue:12 Pages:946
metadata_83	中科院半导体所;中南民族学院电子工程系
Subject Area	半导体材料
Funding Organization	国家自然科学基金
Indexed By	CSCD
Language	中文
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/19655
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	邹吕凡,王占国,孙殿照,等. As＋注入Si1-xGex中应就驰豫的双晶X射线衍射研究[J]. 半导体学报,1996,17(12):946.
APA	邹吕凡,王占国,孙殿照,何沙,范缇文,&张靖巍.(1996).As＋注入Si1-xGex中应就驰豫的双晶X射线衍射研究.半导体学报,17(12),946.
MLA	邹吕凡,et al."As＋注入Si1-xGex中应就驰豫的双晶X射线衍射研究".半导体学报 17.12(1996):946.

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