SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
锗硅量子阱中近带边光跃迁的理论和实验研究
董文甫; 王启明; 杨沁清; 谢小刚; 周钧铭; 黄绮
1996
Source Publication发光学报
Volume17Issue:4Pages:311
Abstract研究了SiGe/Si量子阱中近带边光跃迁的产生机制,对由杂质无规分布引起的近带边光跃迁给出了一个物理模型.用此模型计算了光跃迁偶极矩,给出了跃迁偶极矩的上限.提出了未掺杂SiGe/Si量子阱中近带边光跃迁的一种跃迁机制,认为是Ge原子周围波函数畸变的集体行为.用MBE方法生长了掺杂SiGe/Si量子阱材料,在低温下观测到近带边光跃迁.
metadata_83中科院半导体所;中科院物理所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:315069
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19649
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
董文甫,王启明,杨沁清,等. 锗硅量子阱中近带边光跃迁的理论和实验研究[J]. 发光学报,1996,17(4):311.
APA 董文甫,王启明,杨沁清,谢小刚,周钧铭,&黄绮.(1996).锗硅量子阱中近带边光跃迁的理论和实验研究.发光学报,17(4),311.
MLA 董文甫,et al."锗硅量子阱中近带边光跃迁的理论和实验研究".发光学报 17.4(1996):311.
Files in This Item:
File Name/Size DocType Version Access License
5924.pdf(338KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[董文甫]'s Articles
[王启明]'s Articles
[杨沁清]'s Articles
Baidu academic
Similar articles in Baidu academic
[董文甫]'s Articles
[王启明]'s Articles
[杨沁清]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[董文甫]'s Articles
[王启明]'s Articles
[杨沁清]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.