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MOCVD和GSMBE生长Ga(0.5)In(0.5)P 外延层中有序结构的研究
董建荣; 李晓兵; 孙殿照; 陆大成; 李建平; 孔梅影; 王占国
1996
Source Publication半导体学报
Volume17Issue:9Pages:641
Abstract用MOCVD在(100)、GSMBE在(100)和(111)B GaAs上生长了GaInP外延层.PL测试表明,(100)衬底上GaIn PL 峰的能量比计算的带隙分别小43(GSMBE生长)和104meV(M(CVD生长).用Kurtz等人的模型对MOCVD和GSMBE生长的GaInP中有序度的不同进行了解释.并讨论了衬底晶向对GaInP中有序程度的影响.
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:321252
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19647
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
董建荣,李晓兵,孙殿照,等. MOCVD和GSMBE生长Ga(0.5)In(0.5)P 外延层中有序结构的研究[J]. 半导体学报,1996,17(9):641.
APA 董建荣.,李晓兵.,孙殿照.,陆大成.,李建平.,...&王占国.(1996).MOCVD和GSMBE生长Ga(0.5)In(0.5)P 外延层中有序结构的研究.半导体学报,17(9),641.
MLA 董建荣,et al."MOCVD和GSMBE生长Ga(0.5)In(0.5)P 外延层中有序结构的研究".半导体学报 17.9(1996):641.
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