SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
As+注入Si(1-x)Gex的快速退火行为
邹吕凡; 王占国; 孙殿照; 何沙; 范缇文; 刘学锋; 张靖巍
1996
Source Publication半导体学报
Volume17Issue:9Pages:717
metadata_83中科院半导体所;中南民族学院电子工程系
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19639
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
邹吕凡,王占国,孙殿照,等. As+注入Si(1-x)Gex的快速退火行为[J]. 半导体学报,1996,17(9):717.
APA 邹吕凡.,王占国.,孙殿照.,何沙.,范缇文.,...&张靖巍.(1996).As+注入Si(1-x)Gex的快速退火行为.半导体学报,17(9),717.
MLA 邹吕凡,et al."As+注入Si(1-x)Gex的快速退火行为".半导体学报 17.9(1996):717.
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