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注入Ga离子的GaAs/AlGaAs量子阱中界面混合的光荧光研究
郑宝真; 赛纳; 许继宗; 张鹏华; 杨小平; 徐仲英
1996
Source Publication红外与毫米波学报
Volume15Issue:6Pages:407
Abstract用注入Ga离子GaAs/AlGaAs量子阱在快速热退火中大大加快了异质结界面的互扩散,表现在PL光谱中量子陆峰值能量有30~90meV的兰移.发现兰移大小同注入损伤程度、退火的温度及时间有关.
metadata_83中科院半导体所
Subject Area半导体物理
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:322741
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19633
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
郑宝真,赛纳,许继宗,等. 注入Ga离子的GaAs/AlGaAs量子阱中界面混合的光荧光研究[J]. 红外与毫米波学报,1996,15(6):407.
APA 郑宝真,赛纳,许继宗,张鹏华,杨小平,&徐仲英.(1996).注入Ga离子的GaAs/AlGaAs量子阱中界面混合的光荧光研究.红外与毫米波学报,15(6),407.
MLA 郑宝真,et al."注入Ga离子的GaAs/AlGaAs量子阱中界面混合的光荧光研究".红外与毫米波学报 15.6(1996):407.
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