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GaAs/AlAs异质谷间转移电子器件微波振荡特性的研究
薛舫时; 邓衍茂; 张崇仁
1996
Source Publication电子学报
Volume24Issue:2Pages:17
metadata_83中科院半导体所;电子部南京电子器件所
Subject Area微电子学
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:325234
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19627
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
薛舫时,邓衍茂,张崇仁. GaAs/AlAs异质谷间转移电子器件微波振荡特性的研究[J]. 电子学报,1996,24(2):17.
APA 薛舫时,邓衍茂,&张崇仁.(1996).GaAs/AlAs异质谷间转移电子器件微波振荡特性的研究.电子学报,24(2),17.
MLA 薛舫时,et al."GaAs/AlAs异质谷间转移电子器件微波振荡特性的研究".电子学报 24.2(1996):17.
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