SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
缺陷俘获势垒测定新方法-瞬态光霍耳谱
封松林; 王海龙; 周洁; 杨锡震
1996
Source Publication红外与毫米波学报
Volume15Issue:1Pages:1
Abstract以瞬态光霍尔测量为基础,建立了观测俘获过程的深中心分析测试新手段.该方法不需要做肖特基结、p-n结、或MIS结构,几乎可在零电场下测量缺陷参数,克服电场、德拜带尾、非指数瞬态等对缺陷特性的影响,也克服了深能级瞬态谱技术(DLTS)只能通过载流子发射过程间接测量俘获参数的缺点.用此方法测量了Ga_(0.7)Al_(0.3)As中DX中心的俘获势垒.
metadata_83中科院半导体所;曲阜师范大学物理系;北京师范大学物理系
Subject Area半导体物理
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:327011
Date Available2010-11-23
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19625
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
封松林,王海龙,周洁,等. 缺陷俘获势垒测定新方法-瞬态光霍耳谱[J]. 红外与毫米波学报,1996,15(1):1.
APA 封松林,王海龙,周洁,&杨锡震.(1996).缺陷俘获势垒测定新方法-瞬态光霍耳谱.红外与毫米波学报,15(1),1.
MLA 封松林,et al."缺陷俘获势垒测定新方法-瞬态光霍耳谱".红外与毫米波学报 15.1(1996):1.
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