SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GeSi CVD系统的流体力学和表面反应动力学模型
金晓军; 梁骏吾
1996
Source Publication电子学报
Volume24Issue:5Pages:7
metadata_83中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:327405
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19619
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
金晓军,梁骏吾. GeSi CVD系统的流体力学和表面反应动力学模型[J]. 电子学报,1996,24(5):7.
APA 金晓军,&梁骏吾.(1996).GeSi CVD系统的流体力学和表面反应动力学模型.电子学报,24(5),7.
MLA 金晓军,et al."GeSi CVD系统的流体力学和表面反应动力学模型".电子学报 24.5(1996):7.
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