SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
磁隧穿振荡研究GaAs/AlAs双势垒结构中的Г-X电子态混合
刘剑; 李月霞; 郑厚植; 杨富华; 宋爱民; 李承芳
1996
Source Publication红外与毫米波学报
Volume15Issue:2Pages:113
Abstract报道了非对称GaAs/AlAs双势垒结构(DBS)中的Γ-X-Γ磁隧穿振荡现象,用磁场倒数周 期求得AlAs层中X谷和GaAs层中Γ谷之间的能带不连续值与通常公认值符合很好.良好的 振荡特性可作为定量研究Γ-X耦合强度的灵敏的实验办法.
metadata_83中科院半导体所
Subject Area半导体物理
Funding Organization国家攀登计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:329663
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19611
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘剑,李月霞,郑厚植,等. 磁隧穿振荡研究GaAs/AlAs双势垒结构中的Г-X电子态混合[J]. 红外与毫米波学报,1996,15(2):113.
APA 刘剑,李月霞,郑厚植,杨富华,宋爱民,&李承芳.(1996).磁隧穿振荡研究GaAs/AlAs双势垒结构中的Г-X电子态混合.红外与毫米波学报,15(2),113.
MLA 刘剑,et al."磁隧穿振荡研究GaAs/AlAs双势垒结构中的Г-X电子态混合".红外与毫米波学报 15.2(1996):113.
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