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SiGe/Si量子阱的低温光荧光和电注入发光
董文甫; 王启明; 杨沁清; 崔堑; 周钧铭; 黄绮
1996
Source Publication发光学报
Volume17Issue:2Pages:128
Abstract使用Si-MBE生长了阶梯形折射率分布SiGe/Si量子阱材料,在低温下观测到无声子参与的光荧光和电注入发光。阶梯形折射率分布SiGe/Si电子阱结构有利于提高发光效率。讨论了这种结构的光学和电学特性。
metadata_83中科院半导体所;中科院物理所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:332505
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19605
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
董文甫,王启明,杨沁清,等. SiGe/Si量子阱的低温光荧光和电注入发光[J]. 发光学报,1996,17(2):128.
APA 董文甫,王启明,杨沁清,崔堑,周钧铭,&黄绮.(1996).SiGe/Si量子阱的低温光荧光和电注入发光.发光学报,17(2),128.
MLA 董文甫,et al."SiGe/Si量子阱的低温光荧光和电注入发光".发光学报 17.2(1996):128.
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