SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Ni+注入n-GaP DLTS谱中Ni杂质能级的识别
杨锡震; 陈晓白; 李智; 田强
1996
Source Publication发光学报
Volume17Issue:2Pages:133
Abstract在不同条件下退火的Ni~+注入n-GaP DLTS谱中观测到表观激活能在0.60~0.70eV范围内的多个多子峰和少子峰。对各样品掺杂层内的能带弯曲及Ni杂质各荷电状态浓度空间分布在DLTS测量的零偏-反偏过程中的变化进行了计算。结合分析实测各能级热发射率数据,对其中起源于Ni_(Ga)中心的DLTS峰作出了判断。
metadata_83中科院半导体所;北京师范大学物理系
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:332506
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19603
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
杨锡震,陈晓白,李智,等. Ni+注入n-GaP DLTS谱中Ni杂质能级的识别[J]. 发光学报,1996,17(2):133.
APA 杨锡震,陈晓白,李智,&田强.(1996).Ni+注入n-GaP DLTS谱中Ni杂质能级的识别.发光学报,17(2),133.
MLA 杨锡震,et al."Ni+注入n-GaP DLTS谱中Ni杂质能级的识别".发光学报 17.2(1996):133.
Files in This Item:
File Name/Size DocType Version Access License
5899.pdf(243KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[杨锡震]'s Articles
[陈晓白]'s Articles
[李智]'s Articles
Baidu academic
Similar articles in Baidu academic
[杨锡震]'s Articles
[陈晓白]'s Articles
[李智]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[杨锡震]'s Articles
[陈晓白]'s Articles
[李智]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.