SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
MOCVD生长Ga(0.5)In(0.5)P外延层光学性质的研究
董建荣; 刘祥林; 陆大成; 汪度; 王晓晖; 王占国; 黎健
1996
Source Publication光子学报
Volume25Issue:1Pages:35
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:333710
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19601
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
董建荣,刘祥林,陆大成,等. MOCVD生长Ga(0.5)In(0.5)P外延层光学性质的研究[J]. 光子学报,1996,25(1):35.
APA 董建荣.,刘祥林.,陆大成.,汪度.,王晓晖.,...&黎健.(1996).MOCVD生长Ga(0.5)In(0.5)P外延层光学性质的研究.光子学报,25(1),35.
MLA 董建荣,et al."MOCVD生长Ga(0.5)In(0.5)P外延层光学性质的研究".光子学报 25.1(1996):35.
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