SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
氧离子注入隔离的全内反射型光波导开关
庄婉如; 杨培生; 孙富荣; 石志文; 段继宁; 邹正中; 高俊华
1996
Source Publication光子学报
Volume25Issue:2Pages:119
Abstract研制了一种全内反射型InGaAsP/InP光波导开关。采用氧离子注入形成的高阻特性来作为载流子注入区的隔离。由此获得陡峭的反射面,改善了光开关的性能。在入射光波长为1.3 μm,注入电流为32 mA下得到光开关反射端消光比为18 dB,无注入时的关态串话为-19 dB。
metadata_83中科院半导体所
Subject Area光电子学
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:333725
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19599
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
庄婉如,杨培生,孙富荣,等. 氧离子注入隔离的全内反射型光波导开关[J]. 光子学报,1996,25(2):119.
APA 庄婉如.,杨培生.,孙富荣.,石志文.,段继宁.,...&高俊华.(1996).氧离子注入隔离的全内反射型光波导开关.光子学报,25(2),119.
MLA 庄婉如,et al."氧离子注入隔离的全内反射型光波导开关".光子学报 25.2(1996):119.
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