SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InP的MOVPE生长
刘祥林; 陆大成; 王晓晖; 汪度; 董建荣
1996
Source Publication光子学报
Volume25Issue:2Pages:153
Abstract利用常压MOVPE设备和国产的三甲基铟以及进口的磷烷生长了InP处延材料,其77K迁移 率为65300cm~2/V·s,是国内迄今为止用各种方法获得的InP薄膜的最大低温迁移率值.
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:333730
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19597
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘祥林,陆大成,王晓晖,等. InP的MOVPE生长[J]. 光子学报,1996,25(2):153.
APA 刘祥林,陆大成,王晓晖,汪度,&董建荣.(1996).InP的MOVPE生长.光子学报,25(2),153.
MLA 刘祥林,et al."InP的MOVPE生长".光子学报 25.2(1996):153.
Files in This Item:
File Name/Size DocType Version Access License
5895.pdf(121KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[刘祥林]'s Articles
[陆大成]'s Articles
[王晓晖]'s Articles
Baidu academic
Similar articles in Baidu academic
[刘祥林]'s Articles
[陆大成]'s Articles
[王晓晖]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[刘祥林]'s Articles
[陆大成]'s Articles
[王晓晖]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.