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气态源分子束外延InP和InAs基Ⅲ-V族化合物材料
袁瑞霞; 阎春辉; 国红熙; 李晓兵; 朱世荣; 曾一平; 李灵霄; 孔梅影
1996
Source Publication半导体学报
Volume17Issue:1Pages:6
Abstract简要报告气态源分子束外延实验结果。材料是GaAs(100)衬底上外延的晶格匹配的In_y(Ga_(1-x)Al_x)_(1-y)P(x=0~1,y=0.5),InGaP/InAlP多量子阱;在InP(100)衬底上外延的InP,晶格匹配的InGaAs、InAlAs以及InP/InGaAs、InP/InAsP多量子阱,InGaAs/InAlAs HEMT等,外延实验是用国产第一台化学束外延(CBE)系统做的。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:334506
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19591
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
袁瑞霞,阎春辉,国红熙,等. 气态源分子束外延InP和InAs基Ⅲ-V族化合物材料[J]. 半导体学报,1996,17(1):6.
APA 袁瑞霞.,阎春辉.,国红熙.,李晓兵.,朱世荣.,...&孔梅影.(1996).气态源分子束外延InP和InAs基Ⅲ-V族化合物材料.半导体学报,17(1),6.
MLA 袁瑞霞,et al."气态源分子束外延InP和InAs基Ⅲ-V族化合物材料".半导体学报 17.1(1996):6.
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