SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaInP材料生长及其性质研究
董建荣; 刘祥林; 陆大成; 汪度; 王晓晖; 王占国
1996
Source Publication半导体学报
Volume17Issue:2Pages:88
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:333705
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19589
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
董建荣,刘祥林,陆大成,等. GaInP材料生长及其性质研究[J]. 半导体学报,1996,17(2):88.
APA 董建荣,刘祥林,陆大成,汪度,王晓晖,&王占国.(1996).GaInP材料生长及其性质研究.半导体学报,17(2),88.
MLA 董建荣,et al."GaInP材料生长及其性质研究".半导体学报 17.2(1996):88.
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