Knowledge Management System Of Institute of Semiconductors,CAS
GaAs/AIGaAs光子平行存贮器的性能 | |
夏永伟; 滕学公; 李国花; 樊志军![]() | |
1996 | |
Source Publication | 半导体学报
![]() |
Volume | 17Issue:2Pages:131 |
Abstract | 报告用PnpN型GaAs/AlGaAs结构的光电双稳器件形成的光子平行存贮器单元器件和4×4阵列器件的特性。单元器件的最小维持功耗小于30μW。使器件从“关闭”态翻转到“导通”态所需的光触发功率小于80μW。单元面积160×160μm、间距40μm的存贮器4×4原理性阵列已经研制成功,这是0.85μm波长范围的光子平行存贮器的首次报道。 |
metadata_83 | 中科院半导体所 |
Subject Area | 微电子学 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:334527 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/19587 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 夏永伟,滕学公,李国花,等. GaAs/AIGaAs光子平行存贮器的性能[J]. 半导体学报,1996,17(2):131. |
APA | 夏永伟,滕学公,李国花,樊志军,&王守武.(1996).GaAs/AIGaAs光子平行存贮器的性能.半导体学报,17(2),131. |
MLA | 夏永伟,et al."GaAs/AIGaAs光子平行存贮器的性能".半导体学报 17.2(1996):131. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
5890.pdf(341KB) | 限制开放 | -- | Application Full Text |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment