SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs/GaAlAs中红外量子阱探测器和双色量子阱红外探测器
张耀辉; 江德生; 夏建白; 刘伟; 崔丽秋; 杨小平; 宋春英; 郑厚植; 周增圻; 林耀望
1996
Source Publication半导体学报
Volume17Issue:2Pages:151
Abstract报道GaAs/GaAlAs中红外(3~5μm)量子阱探测器和双色量子阱红外探测器的制备和性能。GaAs/GaAlAs中红外量子阱探测器是光伏型,探测峰值波长为5.3μm,85K下的500K黑体探测率为3.0×10~9cm·Hz~(1/2)/W,峰值探测率达到5×10~(11)cm·Hz~(1/2)/W,阻抗为50MΩ。GaAs/GaAlAs双色量子阱红外探测器是偏压控制型的两端器件,在零偏压下该探测器仅在3~5μm波段有响应,响应峰值波长为5.3μm,85K温度下550K黑体探测率为3.0×10~9cm·Hz~(1/2)/W,当偏压为2V时,该探测器的响应切换到8~12μm波段,峰值响应波长为9.0μm,85K温度下的黑体探测率为1.0×10~9cm·Hz~(1/2)/W。
metadata_83中科院半导体所;国家光电子工艺中心
Subject Area半导体物理
Funding Organization单位基金,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:334531
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19585
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张耀辉,江德生,夏建白,等. GaAs/GaAlAs中红外量子阱探测器和双色量子阱红外探测器[J]. 半导体学报,1996,17(2):151.
APA 张耀辉.,江德生.,夏建白.,刘伟.,崔丽秋.,...&林耀望.(1996).GaAs/GaAlAs中红外量子阱探测器和双色量子阱红外探测器.半导体学报,17(2),151.
MLA 张耀辉,et al."GaAs/GaAlAs中红外量子阱探测器和双色量子阱红外探测器".半导体学报 17.2(1996):151.
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