有序Ga（0.5）In（0.5）P光致发光的研究

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	有序Ga（0.5）In（0.5）P光致发光的研究
	董建荣; 刘祥林; 陆大成; 汪渡; 王晓晖; 王占国
	1996
Source Publication	半导体学报
Volume	17 Issue:3 Pages:180
metadata_83	中科院半导体所
Subject Area	半导体材料
Funding Organization	国家自然科学基金
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:335019
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/19579
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	董建荣,刘祥林,陆大成,等. 有序Ga（0.5）In（0.5）P光致发光的研究[J]. 半导体学报,1996,17(3):180.
APA	董建荣,刘祥林,陆大成,汪渡,王晓晖,&王占国.(1996).有序Ga（0.5）In（0.5）P光致发光的研究.半导体学报,17(3),180.
MLA	董建荣,et al."有序Ga（0.5）In（0.5）P光致发光的研究".半导体学报 17.3(1996):180.

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