SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
应变异质结外延材料的缓冲层厚度与Frank-Read源的关系研究
邹吕凡; 王占国; 范缇文
1996
Source Publication半导体学报
Volume17Issue:3Pages:186
Abstract基于能量最小近似模型,研究了应变异质结外延材料中,产生Frank-Read源以释放失配应力所需GeSi合金缓冲层的厚度。对Ge_xSi_(1-x)/Si进行了具体计算,其结果表明:产生Frank-Read源时缓冲层厚度要比临界厚度大得多,L_(min)=1300A是钉扎点间的最小距离。计算结果与LeGoues等的实验结果相符。就作者所知,计算产生Frank-Read源时GeSi合金缓冲层厚度的工作,以前未见报道。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:335020
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19577
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
邹吕凡,王占国,范缇文. 应变异质结外延材料的缓冲层厚度与Frank-Read源的关系研究[J]. 半导体学报,1996,17(3):186.
APA 邹吕凡,王占国,&范缇文.(1996).应变异质结外延材料的缓冲层厚度与Frank-Read源的关系研究.半导体学报,17(3),186.
MLA 邹吕凡,et al."应变异质结外延材料的缓冲层厚度与Frank-Read源的关系研究".半导体学报 17.3(1996):186.
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