SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
异质结电荷注入晶体管
李桂荣; 郑厚植; 李月霞; 郭纯英; 李承芳; 张鹏华; 杨小平
1996
Source Publication半导体学报
Volume17Issue:3Pages:203
Abstract通过对GaAs/AlGaAs异质结电荷注入晶体管结构和工艺的探索研究,以及对器件工作特性的测量分析,在理论上给出了器件过程的物理机制,并对器件结果提出了进一步的改进措施。
metadata_83中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:335023
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19573
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李桂荣,郑厚植,李月霞,等. 异质结电荷注入晶体管[J]. 半导体学报,1996,17(3):203.
APA 李桂荣.,郑厚植.,李月霞.,郭纯英.,李承芳.,...&杨小平.(1996).异质结电荷注入晶体管.半导体学报,17(3),203.
MLA 李桂荣,et al."异质结电荷注入晶体管".半导体学报 17.3(1996):203.
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