SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
1.27μm吸收型部分增益耦合MQW-DFB激光器
张济志; 王圩; 张静媛; 汪孝杰; 李力; 朱洪亮; 王志杰; 周帆; 马朝华
1996
Source Publication半导体学报
Volume17Issue:3Pages:231
Abstract采用LP-MOCVD和LPE相结合,成功地研制出了吸收型部分增益耦合MQW-DFB激光器。扫描显微镜照片显示了清晰的被掩埋的吸收型增益耦合光栅,表明光栅掩埋生长前升温过程磷烷的保护是成功的。宽接触(broad area)脉冲电流大范围单纵模工作,条型器件室温连续直流工作阈电流为22mA至35mA,单模成品率高,边模抑制比(SMSR)超过37dB,没有观察到饱和吸收现象。
metadata_83中科院半导体所
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:335029
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19569
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张济志,王圩,张静媛,等. 1.27μm吸收型部分增益耦合MQW-DFB激光器[J]. 半导体学报,1996,17(3):231.
APA 张济志.,王圩.,张静媛.,汪孝杰.,李力.,...&马朝华.(1996).1.27μm吸收型部分增益耦合MQW-DFB激光器.半导体学报,17(3),231.
MLA 张济志,et al."1.27μm吸收型部分增益耦合MQW-DFB激光器".半导体学报 17.3(1996):231.
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