SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
MOVPE生长Al(0.35)Ga(0.65)As/GaAs量子阱结构的光致发光
董建荣; 陆大成; 汪度; 王晓晖; 刘祥林; 王占国
1996
Source Publication半导体学报
Volume17Issue:4Pages:252
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language英语
CSCD IDCSCD:335033
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19565
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
董建荣,陆大成,汪度,等. MOVPE生长Al(0.35)Ga(0.65)As/GaAs量子阱结构的光致发光[J]. 半导体学报,1996,17(4):252.
APA 董建荣,陆大成,汪度,王晓晖,刘祥林,&王占国.(1996).MOVPE生长Al(0.35)Ga(0.65)As/GaAs量子阱结构的光致发光.半导体学报,17(4),252.
MLA 董建荣,et al."MOVPE生长Al(0.35)Ga(0.65)As/GaAs量子阱结构的光致发光".半导体学报 17.4(1996):252.
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