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多孔硅膜的半峰值宽度小于10nm的针形发光峰
夏永伟; 滕学公
1996
Source Publication半导体学报
Volume17Issue:4Pages:318
Abstract通过改变电化学腐蚀生成多孔硅膜的工艺条件,研究了它的发光峰形状的变化。第一次从实验上观测到多孔硅膜的针形发光激发谱和发射光谱,其半峰值宽度约小于10nm。讨论了形成针形峰的可能机理。
metadata_83中科院半导体所
Subject Area微电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:335045
Date Available2010-11-23
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19559
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
夏永伟,滕学公. 多孔硅膜的半峰值宽度小于10nm的针形发光峰[J]. 半导体学报,1996,17(4):318.
APA 夏永伟,&滕学公.(1996).多孔硅膜的半峰值宽度小于10nm的针形发光峰.半导体学报,17(4),318.
MLA 夏永伟,et al."多孔硅膜的半峰值宽度小于10nm的针形发光峰".半导体学报 17.4(1996):318.
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