SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Zn扩散工艺在降低VCSEL p型DBR串联电阻中的应用
高洪海; 高俊华; 林世鸣; 康学军; 王红杰; 王立轩
1996
Source Publication半导体光电
Volume17Issue:3Pages:243
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:338237
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19553
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
高洪海,高俊华,林世鸣,等. Zn扩散工艺在降低VCSEL p型DBR串联电阻中的应用[J]. 半导体光电,1996,17(3):243.
APA 高洪海,高俊华,林世鸣,康学军,王红杰,&王立轩.(1996).Zn扩散工艺在降低VCSEL p型DBR串联电阻中的应用.半导体光电,17(3),243.
MLA 高洪海,et al."Zn扩散工艺在降低VCSEL p型DBR串联电阻中的应用".半导体光电 17.3(1996):243.
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