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多量子阱光学波导中的模式截止
刘育梁; 王启明; 孙中禹
1996
Source Publication光学学报
Volume16Issue:7Pages:1017
Abstract导出由两种材料构成的多量子阱光波导的模式截止方程,并讨论了Si衬底上生长的应变Ge_xSi_(1-x)/Si多量子阱光波导的模式截止特性.
metadata_83中科院半导体所;空军电讯工程学院
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:339309
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19551
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘育梁,王启明,孙中禹. 多量子阱光学波导中的模式截止[J]. 光学学报,1996,16(7):1017.
APA 刘育梁,王启明,&孙中禹.(1996).多量子阱光学波导中的模式截止.光学学报,16(7),1017.
MLA 刘育梁,et al."多量子阱光学波导中的模式截止".光学学报 16.7(1996):1017.
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