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GaInAs/AlInAs调制掺杂结构材料的光学性质研究
江德生; 刘伟; 张耀辉; 张永航; Ploog K
1996
Source Publication固体电子学研究与进展
Volume16Issue:2Pages:121
Abstract研究了GaInAs/AlInAs n型调制掺杂结构样品的光致发光及其激发光谱。当空穴态被局域化后,二维电子气的发光线形反映了导带二维态密度的填充效应
metadata_83中科院半导体所;马克斯普朗克固体研究所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:343303
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19539
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
江德生,刘伟,张耀辉,等. GaInAs/AlInAs调制掺杂结构材料的光学性质研究[J]. 固体电子学研究与进展,1996,16(2):121.
APA 江德生,刘伟,张耀辉,张永航,&Ploog K.(1996).GaInAs/AlInAs调制掺杂结构材料的光学性质研究.固体电子学研究与进展,16(2),121.
MLA 江德生,et al."GaInAs/AlInAs调制掺杂结构材料的光学性质研究".固体电子学研究与进展 16.2(1996):121.
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