Knowledge Management System Of Institute of Semiconductors,CAS
InAs/InP(0.7)Sb(0.3)热电子晶体管的fT及f(max) | |
续竞存 | |
1996 | |
Source Publication | 固体电子学研究与进展
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Volume | 16Issue:3Pages:254 |
metadata_83 | 中科院半导体所 |
Subject Area | 光电子学 |
Indexed By | CSCD |
Language | 中文 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/19535 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 续竞存. InAs/InP(0.7)Sb(0.3)热电子晶体管的fT及f(max)[J]. 固体电子学研究与进展,1996,16(3):254. |
APA | 续竞存.(1996).InAs/InP(0.7)Sb(0.3)热电子晶体管的fT及f(max).固体电子学研究与进展,16(3),254. |
MLA | 续竞存."InAs/InP(0.7)Sb(0.3)热电子晶体管的fT及f(max)".固体电子学研究与进展 16.3(1996):254. |
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5861.pdf(343KB) | 限制开放 | -- | Application Full Text |
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