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InAs/InP(0.7)Sb(0.3)热电子晶体管的fT及f(max)
续竞存
1996
Source Publication固体电子学研究与进展
Volume16Issue:3Pages:254
metadata_83中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19535
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
续竞存. InAs/InP(0.7)Sb(0.3)热电子晶体管的fT及f(max)[J]. 固体电子学研究与进展,1996,16(3):254.
APA 续竞存.(1996).InAs/InP(0.7)Sb(0.3)热电子晶体管的fT及f(max).固体电子学研究与进展,16(3),254.
MLA 续竞存."InAs/InP(0.7)Sb(0.3)热电子晶体管的fT及f(max)".固体电子学研究与进展 16.3(1996):254.
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