Gas Source Molecular Beam Epitaxy Growth of Si_(1-x)Ge_x/Si Alloys

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	Gas Source Molecular Beam Epitaxy Growth of Si_(1-x)Ge_x/Si Alloys
	Liu XF(刘学锋); Li JP(李建平); Sun DZ(孙殿照)
	1997
Source Publication	Rare Metals
Volume	16 Issue:2 Pages:122
metadata_83	中科院半导体所
Subject Area	半导体材料
Indexed By	CSCD
Language	英语
CSCD ID	CSCD:357690
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/19515
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Liu XF,Li JP,Sun DZ. Gas Source Molecular Beam Epitaxy Growth of Si_(1-x)Ge_x/Si Alloys[J]. Rare Metals,1997,16(2):122.
APA	刘学锋,李建平,&孙殿照.(1997).Gas Source Molecular Beam Epitaxy Growth of Si_(1-x)Ge_x/Si Alloys.Rare Metals,16(2),122.
MLA	刘学锋,et al."Gas Source Molecular Beam Epitaxy Growth of Si_(1-x)Ge_x/Si Alloys".Rare Metals 16.2(1997):122.

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