SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Gas Source Molecular Beam Epitaxy Growth of Si_(1-x)Ge_x/Si Alloys
Liu XF(刘学锋); Li JP(李建平); Sun DZ(孙殿照)
1997
Source PublicationRare Metals
Volume16Issue:2Pages:122
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:357690
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19515
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Liu XF,Li JP,Sun DZ. Gas Source Molecular Beam Epitaxy Growth of Si_(1-x)Ge_x/Si Alloys[J]. Rare Metals,1997,16(2):122.
APA 刘学锋,李建平,&孙殿照.(1997).Gas Source Molecular Beam Epitaxy Growth of Si_(1-x)Ge_x/Si Alloys.Rare Metals,16(2),122.
MLA 刘学锋,et al."Gas Source Molecular Beam Epitaxy Growth of Si_(1-x)Ge_x/Si Alloys".Rare Metals 16.2(1997):122.
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