Knowledge Management System Of Institute of Semiconductors,CAS
Gas Source Molecular Beam Epitaxy Growth of Si_(1-x)Ge_x/Si Alloys | |
Liu XF(刘学锋); Li JP(李建平); Sun DZ(孙殿照) | |
1997 | |
Source Publication | Rare Metals
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Volume | 16Issue:2Pages:122 |
metadata_83 | 中科院半导体所 |
Subject Area | 半导体材料 |
Indexed By | CSCD |
Language | 英语 |
CSCD ID | CSCD:357690 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/19515 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | Liu XF,Li JP,Sun DZ. Gas Source Molecular Beam Epitaxy Growth of Si_(1-x)Ge_x/Si Alloys[J]. Rare Metals,1997,16(2):122. |
APA | 刘学锋,李建平,&孙殿照.(1997).Gas Source Molecular Beam Epitaxy Growth of Si_(1-x)Ge_x/Si Alloys.Rare Metals,16(2),122. |
MLA | 刘学锋,et al."Gas Source Molecular Beam Epitaxy Growth of Si_(1-x)Ge_x/Si Alloys".Rare Metals 16.2(1997):122. |
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5846.pdf(300KB) | 限制开放 | -- | Application Full Text |
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