SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
选择性质子轰击DC-PBH激光器
张佰君; 衣茂斌; 李德辉; 申智渊; 高鼎三; 马晓宇
1997
Source Publication半导体光电
Volume18Issue:5Pages:350
Abstract在普通双沟平面掩埋异质结(DC-PBH)激光器的基础上,采用质子轰击的技术,制作了一种新型的选择性质子轰击DC-PBH激光器。这种新型的激光器结构与以前普遍的DC-PBH结构相比阈值电流降低,傅出功率及量子效率得到提高,尤其是它的调制特性得到明显改善,这种结构激光器的调制带宽由原来的2.0GHz提高到6.0GHz。
metadata_83吉林大学;中科院半导体所
Subject Area半导体器件
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:358424
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19513
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张佰君,衣茂斌,李德辉,等. 选择性质子轰击DC-PBH激光器[J]. 半导体光电,1997,18(5):350.
APA 张佰君,衣茂斌,李德辉,申智渊,高鼎三,&马晓宇.(1997).选择性质子轰击DC-PBH激光器.半导体光电,18(5),350.
MLA 张佰君,et al."选择性质子轰击DC-PBH激光器".半导体光电 18.5(1997):350.
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