SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
高质量GaN材料的GSMBE生长
王晓亮; 孙殿照; 孔梅影; 张剑平; 傅荣辉; 朱世荣; 曾一平; 李晋闽; 林兰英
1997
Source Publication半导体学报
Volume18Issue:12Pages:935
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家九五计划,中国博士后基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:358504
Date Available2010-11-23
Citation statistics
Cited Times:5[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19505
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王晓亮,孙殿照,孔梅影,等. 高质量GaN材料的GSMBE生长[J]. 半导体学报,1997,18(12):935.
APA 王晓亮.,孙殿照.,孔梅影.,张剑平.,傅荣辉.,...&林兰英.(1997).高质量GaN材料的GSMBE生长.半导体学报,18(12),935.
MLA 王晓亮,et al."高质量GaN材料的GSMBE生长".半导体学报 18.12(1997):935.
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