SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
刻蚀腔InGaAsP/InP双异质结激光器的制作与特性
颜学进; 张权生; 石志文; 杜云; 祝亚芹; 罗丽萍; 朱家廉; 吴荣汉; 王启明
1997
Source Publication半导体学报
Volume18Issue:11Pages:836
metadata_83中科院半导体所
Subject Area半导体器件
Funding Organization国家自然科学基金,集成光电子学联合国家重点实验室基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:358508
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19501
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
颜学进,张权生,石志文,等. 刻蚀腔InGaAsP/InP双异质结激光器的制作与特性[J]. 半导体学报,1997,18(11):836.
APA 颜学进.,张权生.,石志文.,杜云.,祝亚芹.,...&王启明.(1997).刻蚀腔InGaAsP/InP双异质结激光器的制作与特性.半导体学报,18(11),836.
MLA 颜学进,et al."刻蚀腔InGaAsP/InP双异质结激光器的制作与特性".半导体学报 18.11(1997):836.
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