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Al_xGa_(1-x)As/GaAs多层异质材料中Al_xGa(1-x)As层氧化特性的实验研究
康学军; 林世鸣; 高俊华; 廖奇为; 朱家廉; 王红杰; 张春晖; 王启明
1997
Source Publication半导体学报
Volume18Issue:10Pages:791
metadata_83中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:358523
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19495
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
康学军,林世鸣,高俊华,等. Al_xGa_(1-x)As/GaAs多层异质材料中Al_xGa(1-x)As层氧化特性的实验研究[J]. 半导体学报,1997,18(10):791.
APA 康学军.,林世鸣.,高俊华.,廖奇为.,朱家廉.,...&王启明.(1997).Al_xGa_(1-x)As/GaAs多层异质材料中Al_xGa(1-x)As层氧化特性的实验研究.半导体学报,18(10),791.
MLA 康学军,et al."Al_xGa_(1-x)As/GaAs多层异质材料中Al_xGa(1-x)As层氧化特性的实验研究".半导体学报 18.10(1997):791.
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