SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
(113)B-GaAs/As(0.3)Ga(0.7)As单量子阱结构的光致发光谱研究
陈定钦; 邢益荣; 李国华; 朱勤生; 曹作萍; 张广泽; 肖君; 吴汲安; 钟战天
1997
Source Publication半导体学报
Volume18Issue:11Pages:832
metadata_83中科院半导体所
Subject Area半导体物理
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:358531
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19493
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈定钦,邢益荣,李国华,等. (113)B-GaAs/As(0.3)Ga(0.7)As单量子阱结构的光致发光谱研究[J]. 半导体学报,1997,18(11):832.
APA 陈定钦.,邢益荣.,李国华.,朱勤生.,曹作萍.,...&钟战天.(1997).(113)B-GaAs/As(0.3)Ga(0.7)As单量子阱结构的光致发光谱研究.半导体学报,18(11),832.
MLA 陈定钦,et al."(113)B-GaAs/As(0.3)Ga(0.7)As单量子阱结构的光致发光谱研究".半导体学报 18.11(1997):832.
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