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不同厚度GaAs覆盖层对自组织生长InAs量子点退火效应的影响
王志明; 吕振东; 封松林; 赵谦; 李树英; 吉秀江; 陈宗圭; 徐仲英; 郑厚植
1997
Source Publication半导体学报
Volume18Issue:9Pages:714
Abstract利用光致发光测量了不同厚度GaAs覆盖层对自组织生长InAs量子点退火效应的影响。退火使量子点发光峰蓝移,发光强度减弱。深埋的量子点承受更大的应变,应变使退火引起的互扩散加强。GaAs盖层越厚,量子点的互扩散越明显,发光峰蓝移越显著,并由此导致了发光峰半高宽的不同变化。
metadata_83中科院半导体所
Subject Area半导体物理
Funding Organization国家攀登计划,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:358532
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19491
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王志明,吕振东,封松林,等. 不同厚度GaAs覆盖层对自组织生长InAs量子点退火效应的影响[J]. 半导体学报,1997,18(9):714.
APA 王志明.,吕振东.,封松林.,赵谦.,李树英.,...&郑厚植.(1997).不同厚度GaAs覆盖层对自组织生长InAs量子点退火效应的影响.半导体学报,18(9),714.
MLA 王志明,et al."不同厚度GaAs覆盖层对自组织生长InAs量子点退火效应的影响".半导体学报 18.9(1997):714.
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