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压应变In(0.63)Ga(0.3)7As/InP单量子阱的变温光致发光研究
王晓亮; 孙殿照; 孔梅影; 侯洵; 曾一平
1997
Source Publication半导体学报
Volume18Issue:9Pages:660
metadata_83中科院半导体所;中科院西安光学精密机械所
Subject Area半导体材料
Funding Organization国家863计划
Indexed ByCSCD
Language英语
CSCD IDCSCD:358546
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19485
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王晓亮,孙殿照,孔梅影,等. 压应变In(0.63)Ga(0.3)7As/InP单量子阱的变温光致发光研究[J]. 半导体学报,1997,18(9):660.
APA 王晓亮,孙殿照,孔梅影,侯洵,&曾一平.(1997).压应变In(0.63)Ga(0.3)7As/InP单量子阱的变温光致发光研究.半导体学报,18(9),660.
MLA 王晓亮,et al."压应变In(0.63)Ga(0.3)7As/InP单量子阱的变温光致发光研究".半导体学报 18.9(1997):660.
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