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压应变In(0.63)Ga(0.3)7As/InP单量子阱的变温光致发光研究 | |
王晓亮; 孙殿照; 孔梅影; 侯洵; 曾一平 | |
1997 | |
Source Publication | 半导体学报
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Volume | 18Issue:9Pages:660 |
metadata_83 | 中科院半导体所;中科院西安光学精密机械所 |
Subject Area | 半导体材料 |
Funding Organization | 国家863计划 |
Indexed By | CSCD |
Language | 英语 |
CSCD ID | CSCD:358546 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/19485 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 王晓亮,孙殿照,孔梅影,等. 压应变In(0.63)Ga(0.3)7As/InP单量子阱的变温光致发光研究[J]. 半导体学报,1997,18(9):660. |
APA | 王晓亮,孙殿照,孔梅影,侯洵,&曾一平.(1997).压应变In(0.63)Ga(0.3)7As/InP单量子阱的变温光致发光研究.半导体学报,18(9),660. |
MLA | 王晓亮,et al."压应变In(0.63)Ga(0.3)7As/InP单量子阱的变温光致发光研究".半导体学报 18.9(1997):660. |
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