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借助硅片减薄重掺硅间隙氧含量低温(10K)红外测量
王启元; 王俊; 韩秀峰; 邓惠芳; 王建华; 昝育德; 蔡田海; 郁元桓; 林兰英
1997
Source Publication半导体学报
Volume18Issue:8Pages:587
Abstract报道了一种新颖的重掺硅中间隙氧含量测量技术,通过硅片减薄并采用低温红外透射测量,明显降低了重掺硅自由载流子吸收的严重干扰,提高了红外吸收峰信噪比,在1136cm~(-1)附近得到了明显的Si-O键红外吸收峰,从而可以准确地测量重掺硅间隙氧含量。实验结果表明
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:358558
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19479
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王启元,王俊,韩秀峰,等. 借助硅片减薄重掺硅间隙氧含量低温(10K)红外测量[J]. 半导体学报,1997,18(8):587.
APA 王启元.,王俊.,韩秀峰.,邓惠芳.,王建华.,...&林兰英.(1997).借助硅片减薄重掺硅间隙氧含量低温(10K)红外测量.半导体学报,18(8),587.
MLA 王启元,et al."借助硅片减薄重掺硅间隙氧含量低温(10K)红外测量".半导体学报 18.8(1997):587.
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