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InAs/GaAs自组织生长量子点结构中浸润层光致发光研究
吕振东; 徐仲英; 郑宝真; 许继宗; 王玉琦; 王建农; 葛惟锟
1997
Source Publication半导体学报
Volume18Issue:8Pages:631
Abstract当激发光能量小于GaAs热垒带边能量时,在InAs量子点结构中,清楚地观察到与InAs浸润层有关的发光峰。研究表明,此发光峰主要来源于浸润层中局域态激子发光,局域化能量为12meV,发光具有二维特性。在相同的生长条件下,此发光峰位置与InAs层的厚度基本无关。这些结果有助于进一步深入研究浸润层的形貌和光学性质。
metadata_83中科院半导体所;香港科技大学物理系
Subject Area半导体材料
Funding Organization国家自然科学基金,国家攀登计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:358565
Date Available2010-11-23
Citation statistics
Cited Times:3[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19477
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
吕振东,徐仲英,郑宝真,等. InAs/GaAs自组织生长量子点结构中浸润层光致发光研究[J]. 半导体学报,1997,18(8):631.
APA 吕振东.,徐仲英.,郑宝真.,许继宗.,王玉琦.,...&葛惟锟.(1997).InAs/GaAs自组织生长量子点结构中浸润层光致发光研究.半导体学报,18(8),631.
MLA 吕振东,et al."InAs/GaAs自组织生长量子点结构中浸润层光致发光研究".半导体学报 18.8(1997):631.
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