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Two-Dimensional Simulation of Interface States Effect on AlGaAs/GaAs HEMT | |
Zhang XH(张兴宏); Yang YF(杨玉芬); Wang ZG(王占国) | |
1997 | |
Source Publication | 半导体学报
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Volume | 18Issue:8Pages:636 |
metadata_83 | 中科院半导体所 |
Subject Area | 半导体材料 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:358566 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/19475 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | Zhang XH,Yang YF,Wang ZG. Two-Dimensional Simulation of Interface States Effect on AlGaAs/GaAs HEMT[J]. 半导体学报,1997,18(8):636. |
APA | 张兴宏,杨玉芬,&王占国.(1997).Two-Dimensional Simulation of Interface States Effect on AlGaAs/GaAs HEMT.半导体学报,18(8),636. |
MLA | 张兴宏,et al."Two-Dimensional Simulation of Interface States Effect on AlGaAs/GaAs HEMT".半导体学报 18.8(1997):636. |
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