Two-Dimensional Simulation of Interface States Effect on AlGaAs/GaAs HEMT

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Two-Dimensional Simulation of Interface States Effect on AlGaAs/GaAs HEMT
	Zhang XH(张兴宏); Yang YF(杨玉芬); Wang ZG(王占国)
	1997
Source Publication	半导体学报
Volume	18 Issue:8 Pages:636
metadata_83	中科院半导体所
Subject Area	半导体材料
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:358566
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/19475
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Zhang XH,Yang YF,Wang ZG. Two-Dimensional Simulation of Interface States Effect on AlGaAs/GaAs HEMT[J]. 半导体学报,1997,18(8):636.
APA	张兴宏,杨玉芬,&王占国.(1997).Two-Dimensional Simulation of Interface States Effect on AlGaAs/GaAs HEMT.半导体学报,18(8),636.
MLA	张兴宏,et al."Two-Dimensional Simulation of Interface States Effect on AlGaAs/GaAs HEMT".半导体学报 18.8(1997):636.

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