SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Two-Dimensional Simulation of Interface States Effect on AlGaAs/GaAs HEMT
Zhang XH(张兴宏); Yang YF(杨玉芬); Wang ZG(王占国)
1997
Source Publication半导体学报
Volume18Issue:8Pages:636
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:358566
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19475
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Zhang XH,Yang YF,Wang ZG. Two-Dimensional Simulation of Interface States Effect on AlGaAs/GaAs HEMT[J]. 半导体学报,1997,18(8):636.
APA 张兴宏,杨玉芬,&王占国.(1997).Two-Dimensional Simulation of Interface States Effect on AlGaAs/GaAs HEMT.半导体学报,18(8),636.
MLA 张兴宏,et al."Two-Dimensional Simulation of Interface States Effect on AlGaAs/GaAs HEMT".半导体学报 18.8(1997):636.
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