SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
自组织生长多层垂直耦合InAs量子点的研究
王志明; 邓元明; 封松林; 吕振东; 陈宗圭; 王凤莲; 徐仲英; 郑厚植; 高--; 韩培德; 段晓峰
1997
Source Publication半导体学报
Volume18Issue:7Pages:550
Abstract报道了关于InAs/GaAs自组织生长多层垂直耦合量子点的研究结果。透射电子显微镜测量显示多层量子点在生长方向上成串排列,有些量子串会发生融和。还有些量子串生长不完全,也就是说包含的量子点个数少于InAs层数,并由此导致多耦合量子点的光致发光谱具有高能带尾。
metadata_83中科院半导体所;中科院北京电子显微镜实验室
Subject Area半导体物理
Funding Organization国家攀登计划,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:358575
Date Available2010-11-23
Citation statistics
Cited Times:7[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19469
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王志明,邓元明,封松林,等. 自组织生长多层垂直耦合InAs量子点的研究[J]. 半导体学报,1997,18(7):550.
APA 王志明.,邓元明.,封松林.,吕振东.,陈宗圭.,...&段晓峰.(1997).自组织生长多层垂直耦合InAs量子点的研究.半导体学报,18(7),550.
MLA 王志明,et al."自组织生长多层垂直耦合InAs量子点的研究".半导体学报 18.7(1997):550.
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