SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
流体静压下研究电场畴的形成机制
孙宝权; 刘振兴; 江德生
1997
Source Publication半导体学报
Volume18Issue:7Pages:554
Abstract利用流体静压方法研究了掺杂弱耦合GaAs/AlAs超晶格中电场畴的形成机制。对于第一个电流类平台区域,观察到两种级联菜振隧穿过程,即当p≤2kbar时,高场畴为Г-Г级联共振隧穿过程,而当p>2kbar时,高场畴为Г-X级联共振隧穿过程。对于第二个电流类平台区域,高场畴常压下为Г-X级联共振隧穿。
metadata_83中科院半导体所;中科院物理所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:358576
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19467
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
孙宝权,刘振兴,江德生. 流体静压下研究电场畴的形成机制[J]. 半导体学报,1997,18(7):554.
APA 孙宝权,刘振兴,&江德生.(1997).流体静压下研究电场畴的形成机制.半导体学报,18(7),554.
MLA 孙宝权,et al."流体静压下研究电场畴的形成机制".半导体学报 18.7(1997):554.
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