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半绝缘GaAs衬底中位错对MESFETs旁栅效应的影响
吴巨; 何宏家; 范缇文; 王占国
1997
Source Publication半导体学报
Volume18Issue:7Pages:558
Abstract在位错密度不同的LEC半绝缘(SI)GaAs衬底上离子注入制做MESFETs,观察衬底位错对MESFETs旁栅效应的影响。结果表明,衬底中高位错密度可以拟制旁栅效应。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:358577
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19465
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
吴巨,何宏家,范缇文,等. 半绝缘GaAs衬底中位错对MESFETs旁栅效应的影响[J]. 半导体学报,1997,18(7):558.
APA 吴巨,何宏家,范缇文,&王占国.(1997).半绝缘GaAs衬底中位错对MESFETs旁栅效应的影响.半导体学报,18(7),558.
MLA 吴巨,et al."半绝缘GaAs衬底中位错对MESFETs旁栅效应的影响".半导体学报 18.7(1997):558.
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