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MBE生长应变Si(1-x)Ge_x/Si MQW结构中Ge分布的计算
司俊杰; 杨沁清; 王启明
1997
Source Publication半导体学报
Volume18Issue:8Pages:561
Abstract根据MBE实际生长条件,采用在应变Si_(1-x)Ge_x/Si MQW结构中同应变相关的Ge的扩散系数,用生长过程的移动边界条件,求解了Ge在Si_(1-x)Ge_x/Si MQW中的扩散方程,模拟出了MQW的畸变,指出了这种畸变具有固定的不对称性,并分析了不同生长温度、应变及阱宽情况下MQW畸变。
metadata_83中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:358578
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19463
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
司俊杰,杨沁清,王启明. MBE生长应变Si(1-x)Ge_x/Si MQW结构中Ge分布的计算[J]. 半导体学报,1997,18(8):561.
APA 司俊杰,杨沁清,&王启明.(1997).MBE生长应变Si(1-x)Ge_x/Si MQW结构中Ge分布的计算.半导体学报,18(8),561.
MLA 司俊杰,et al."MBE生长应变Si(1-x)Ge_x/Si MQW结构中Ge分布的计算".半导体学报 18.8(1997):561.
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