SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
硅双极晶体管的低温h_(FE)
薄仕群; 林兆军
1997
Source Publication半导体学报
Volume18Issue:6Pages:454
Abstract低温下h_(FE)主要决定于发射效率γ和集电区倍增因子M。影响γ的是禁带收缩和基区费米能级。M则主要由中性杂质被碰撞电离而造成的电流倍增效应决定,并且这是一种自抑制效应。以上观点与实验结果基本相符合。
metadata_83河北大学电子系;中科院半导体所
Subject Area微电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:358581
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19461
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
薄仕群,林兆军. 硅双极晶体管的低温h_(FE)[J]. 半导体学报,1997,18(6):454.
APA 薄仕群,&林兆军.(1997).硅双极晶体管的低温h_(FE).半导体学报,18(6),454.
MLA 薄仕群,et al."硅双极晶体管的低温h_(FE)".半导体学报 18.6(1997):454.
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