50周期的In（0.3）Ga（0.7）As/GaAs应变超晶格的生长

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	50周期的In（0.3）Ga（0.7）As/GaAs应变超晶格的生长
	潘栋; 曾一平; 吴巨; 王红梅; 李晋闽; 孔梅影
	1997
Source Publication	半导体学报
Volume	18 Issue:6 Pages:470
metadata_83	中科院半导体所
Subject Area	半导体材料
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:358584
Date Available	2010-11-23
Citation statistics	Cited Times:1[CSCD] [CSCD Record]
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/19459
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	潘栋,曾一平,吴巨,等. 50周期的In（0.3）Ga（0.7）As/GaAs应变超晶格的生长[J]. 半导体学报,1997,18(6):470.
APA	潘栋,曾一平,吴巨,王红梅,李晋闽,&孔梅影.(1997).50周期的In（0.3）Ga（0.7）As/GaAs应变超晶格的生长.半导体学报,18(6),470.
MLA	潘栋,et al."50周期的In（0.3）Ga（0.7）As/GaAs应变超晶格的生长".半导体学报 18.6(1997):470.

Related Services

Bookmark

Google Scholar

Similar articles in Bing Scholar

Terms of Use

No data!

Social Bookmark/Share

All comments (0)

No comment.

The comment function is only available to registered usersLog In

If you have any objections to this item, please fill out the form below and the administrator will contact you as soon as possible.
Content:
Email：	*
Institution:
Verification Code:	Refresh

Any comments and suggestions are welcomed.
Title:	*
Content:
Email：	*
Verification Code:	Refresh

中国科学院半导体研究所机构知识库