50周期的In（0.3）Ga（0.7）As/GaAs应变超晶格的生长

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	50周期的In（0.3）Ga（0.7）As/GaAs应变超晶格的生长
	潘栋; 曾一平; 吴巨; 王红梅; 李晋闽; 孔梅影
	1997
Source Publication	半导体学报
Volume	18 Issue:6 Pages:470
metadata_83	中科院半导体所
Subject Area	半导体材料
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:358584
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/19459
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	潘栋,曾一平,吴巨,等. 50周期的In（0.3）Ga（0.7）As/GaAs应变超晶格的生长[J]. 半导体学报,1997,18(6):470.
APA	潘栋,曾一平,吴巨,王红梅,李晋闽,&孔梅影.(1997).50周期的In（0.3）Ga（0.7）As/GaAs应变超晶格的生长.半导体学报,18(6),470.
MLA	潘栋,et al."50周期的In（0.3）Ga（0.7）As/GaAs应变超晶格的生长".半导体学报 18.6(1997):470.

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