SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
半导体微腔物理及其应用
郑厚植
1997
Source Publication半导体学报
Volume18Issue:7Pages:481
Abstract半导体微物理是半导体低维结构物理与量子光学的交叉前沿领域。该文就半导体微腔中自发辐射增强效应,腔极化激元与Rabi分裂,腔极化激元的色散关系,稳态与瞬态的光学性质,三维受限微腔激光器特性等作一概要介绍,力图重点地从物理角度来阐明这些物理现象。
metadata_83中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:358587
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19455
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
郑厚植. 半导体微腔物理及其应用[J]. 半导体学报,1997,18(7):481.
APA 郑厚植.(1997).半导体微腔物理及其应用.半导体学报,18(7),481.
MLA 郑厚植."半导体微腔物理及其应用".半导体学报 18.7(1997):481.
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