SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
In_xGa_(1-x)As/InP应变多量子阱P-i-N结构的GSMBE生长及X射线双晶衍射研究
王晓亮; 孙殿照; 孔梅影; 侯洵; 曾一平
1997
Source Publication半导体学报
Volume18Issue:7Pages:502
metadata_83中科院半导体所;中科院西安光学精密机械所
Subject Area半导体材料
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:358590
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19453
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王晓亮,孙殿照,孔梅影,等. In_xGa_(1-x)As/InP应变多量子阱P-i-N结构的GSMBE生长及X射线双晶衍射研究[J]. 半导体学报,1997,18(7):502.
APA 王晓亮,孙殿照,孔梅影,侯洵,&曾一平.(1997).In_xGa_(1-x)As/InP应变多量子阱P-i-N结构的GSMBE生长及X射线双晶衍射研究.半导体学报,18(7),502.
MLA 王晓亮,et al."In_xGa_(1-x)As/InP应变多量子阱P-i-N结构的GSMBE生长及X射线双晶衍射研究".半导体学报 18.7(1997):502.
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