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MBE InGaAs/GaAs外延层晶胞弛豫直接测量的X射线双晶衍射方法
庄岩; 王玉田; 马文全; 林耀望; 周增圻
1997
Source Publication半导体学报
Volume18Issue:7Pages:508
Abstract采用了以解理面为衍射基面,直接测量水平弛豫的方法测量了In_xGa_(1-x)As(衬底为GaAs,X-0.1)外延层的应变及其弛豫状态。在以解理面为衍射基面的衍射曲线上清楚地观测到了衬底峰与外延峰的分裂。表明当InGaAs层厚度较厚(-2μm)时,InGaAs外延层与衬底GaAs已处于非共格生长状态,同时发现大失配的InGaAs晶胞并没有完全弛豫恢复到自由状态。其平行于表面法线的晶格参数略大于垂直方向上的晶格参数(△α/α-10~(-3))。并且晶胞在弛豫过程中产生了切向应变。在考虑了切向应变的基础上准确地确定出了InGaAs层的In组分x。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:358591
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19451
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
庄岩,王玉田,马文全,等. MBE InGaAs/GaAs外延层晶胞弛豫直接测量的X射线双晶衍射方法[J]. 半导体学报,1997,18(7):508.
APA 庄岩,王玉田,马文全,林耀望,&周增圻.(1997).MBE InGaAs/GaAs外延层晶胞弛豫直接测量的X射线双晶衍射方法.半导体学报,18(7),508.
MLA 庄岩,et al."MBE InGaAs/GaAs外延层晶胞弛豫直接测量的X射线双晶衍射方法".半导体学报 18.7(1997):508.
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